You must see this MOSFET for yourself to fully understand its exquisite capabilities. Additionally, this transistor offers low leakage as well as low gate charge. Thus, it is ideal for high efficiency switched mode power supplies. Especially tailored for high grade, fast pace repetitious industrial applications.
Switch on, fast track, repeat. E.D.E Electronics Ltd. Is proud to present the Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) solution built for fast effects in the field. This MOSFET solution offers multiple power management capabilities, especially tailored for high demand, high intensity industrial applications. This solution can provide fast switching capability and an optimal reverse body recovery operability.
Dubbed “GSFT06130” by voltage control innovator Good Ark Semiconductor, this MOSFET leverages the latest techniques to achieve high cell density and low on-resistance. Thus, resulting in the form of a low gate charge. As a result, making the module extremely efficient and reliable for use in high efficiency switch mode power supply scenarios. Alongside a wide spectrum of various applications. In parallel, Storage temperature and operational Junction Temperature spectrums ranging from -55°C to 150°C respectively.
In addition, the solution is ideal for power switching operations. Meaning, it is most suited to function in operations cycles which demand switching on and off repeatedly and continuously in a fast pace and abrupt processes. Let’s say production lines. With field proven operability of hundreds and hundreds of cases with minimal nano A current leakage caused (with values neatly determined at only their tens nano A at the highest), this module is rugged to it’s core. Furthermore, this solution ensures full reverse body recovery because of its tough capabilities.